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• Electro-Mechanical Broadband RF Switch.
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Fully Matched Cascadable Amp
The TQP3M9009 has been added to the company’s low noise gain block family for high performance 3G/4G infrastructure. This cascadable amplifier is fully matched internally, allowing designers to focus on system level needs. It operates over a broad .05 to 4 GHz frequency range.

Bandpass Filter
Part number 2965-SMA is a 500 MHz bandpass filter. The filter has a typical 1 dB bandwidth of 8 MHz, insertion loss of 6.5 dB and typical 40 dB bandwidth of 52 MHz. It is supplied in a 0.6 x 0.6 x 2.25" SMA package and may be customized for other center frequencies and bandwidths.

UltraFast™ Digitally Programmable LDO
The LT3071 is the second in a family of digitally programmable linear regulators with the lowest dropout voltage, lowest noise, and fastest transient response of any monolithic 5A LDO currently available. Dropout voltage at 5A is an ultralow 85mV. Its QFN package is 4 x 5 x 0.75mm in size.


Microwave Power MMIC
A 4W C-Band GaAs MMIC for satellite applications, the TMD0608-4 operates in the 5.65 to 8.50 GHz range. With this broad bandwidth, a high gain of 27 dB throughout the operating range, and 50 ohm internal matching, this device is well suited for use as a pre-amplifier in C-Band satellite and terrestrial communications.

USB Power Sensors
The U2000 Series USB-based power sensors are compact, portable solutions that allow average power measurements without power meters. All sensors, except the U2004A model, feature internal triggering and trace display capabilities. Current users of these sensors can upgrade their firmware for free.

Directional Couplers
Miniature air dielectric directional couplers are rugged, lightweight devices that offer lower insertion loss than comparable stripline units. The simplified construction allows for greater flexibility in creating customized configurations. Any port can be used as the input with these devices.

Elliptic Lowpass Filter
Part number 2969-SMA is a high order 10 MHz elliptic lowpass filter with sharp transition to the stopband and high stopband attenuation. Typical 1 dB bandwidth is 10.9 MHz with minimum 84 dB attenuation at 13.125 MHz. It is supplied in a 0.6 x 0.6 2.25" package with SMA connectors.

Directional Coupler
Model 110067016 directional coupler has a frequency range of 10 to 67 GHz, 7.25 directivity, and maximum VSWR (any port) of 2.0. Coupling (with respect to output) is 16 +/-1.1 dB and frequency sensitivity is +/-2.0 dB. Operating temperature range is -54 to +85ºC.

Fixed Frequency Synthesizer
The SFS6400A-LF in C-band is a single frequency synthesizer that operates at 6400 MHz. This synthesizer features a typical phase noise of -88 dBc/Hz @ 10 KHz offset and typical sideband spurs of -65 dBc. Its PLL-V12N package measures only 0.60 x 0.60 x 0.13".

Higher Power GaAs FETs
The company has expanded its Ku-Band GaAs FET lineup with two higher output power devices rated for 18 and 30W. Models TIM1213-18L and TIM1213-30L operate in the 12.7 to 13.2 GHz range and are targeted for use in microwave radios for microwave links and satellite communications.
 
EMT SMT Diode TVS Connectors
Now available are transient protection solutions embedded within the connector shell utilizing surface mount (SMT) diodes. Using SMT diode technology allows for increased flexibility in the packaging of transient protection within the connector, saving both space and weight.


Low Noise Gain Block
Model TQP3M9008 is a new low noise gain block that offers high gain over a broad .05 to 4 GHz frequency range. It is a cascadable amplifier that requires no external matching components and can reduce BOMs. The gain block provides 35.5 dBm OIP3, while maintaining a low 1.3 dB noise figure.

 

 

 

June 2009

Long Live the Tube!
By Joseph Hajduk, CEO, dB Control

If you’re like most RF and microwave engineers, it’s been a long time since anyone brought up the word “tube,” except for maybe tube socks. For those of us old enough to remember, tubes ushered in “the dawn of radio” and were the guts of the first TVs.

Actually, there are still quite a few engineers designing amplifiers and transmitters based on traveling wave tubes (TWTs) and other vacuum electronic devices (VEDs) such as klystrons and crossed-field amplifiers. These allegedly archaic devices remain the sole purveyors of “real” RF power. By that I mean kilowatts or megawatts – enough to power the brawniest broadcast transmitters, radar systems, and a wide assortment of defense systems such as electronic warfare or electronic countermeasures suites. In fact, it’s safe to say that every EW or ECM system now in service, and most of those on the drawing board, use or are being designed around amplifiers based on tubes. And tubes are also used to power the transponders in communication satellites.

So why in this day of solid-state supremacy are TWTs still so extensively employed? The answer is simple: There is no other type of device that can match the ability of a TWT to deliver high levels of RF power over broad bandwidths at frequencies up to 95 GHz or higher. Even the most impressive gallium nitride (GaN), silicon LDMOS, or GaAs RF power transistors produce at most just over 1 kW of RF power, and then only at comparatively low frequencies. While solid-state devices are used for a broad range of amplifier and transmitter applications because they have a long life, can be inexpensively mass produced, and operate from low-voltage DC supplies, nearly all of these applications require comparatively low RF output power over narrow bandwidths.

Even though solid-state devices have taken center stage, the development of TWT technology has steadily progressed. VED – or what I like to call “tube” – manufacturers continuously enhance the performance of their products. For example, the operating life of many TWTs now reaches 100,000 hours, which means that they can reliably deliver their rated performance continuously for more than 11 years. This makes them well suited to the typical lifetime of a satellite communications system, and well beyond that required in most defense applications. Plus, when their day is done, a TWT can be easily replaced with another TWT in systems designed with this capability.

One of the greatest perceived disadvantages of tube-based amplifiers is their need for kilovolt power supplies, which increase size, weight, and system overhead. While this is indeed the case for very-high-power systems, in most instances, it has rarely limited the TWT amplifier’s usefulness. Besides, the power supplies used to accommodate solid-state amplifiers for these applications would be just as formidable, considering that they would need to power-combine hundreds of transistors to produce the required RF output power.

MPMs – a Compact Alternative to the TWTA
The “mini-TWT” (essentially a shorter version of its conventional sibling), was first developed in the late 1970s. A decade and a half later, a program funded by the U.S. Army, Navy, and Air Force produced small, high-power amplifier modules in a common form factor that operated from low-voltage DC power supplies. The idea was to use a solid-state driver amplifier based on MMICs or discrete RF power transistors to drive a mini-TWT and combine them with power and control circuits in a very compact enclosure. The resulting Microwave Power Module (MPM) exploits the inherent advantages of both solid-state and tube technologies to deliver the best of both worlds.

Today, MPMs from dB Control and other manufacturers are available with RF outputs up to about 300 W CW (1 kW pulsed), and at frequencies as high as 50 GHz. These MPMs are extensively used in ECM, radar, and satellite communications systems. For example, dB Control’s MPMs power the radar systems onboard the Predator UAVs that have proven so indispensible in Iraq and Afghanistan.

Advanced Tubes for Terahertz Requirements
Looking over the development horizon, there is interesting tube research taking place to meet the needs of systems operating in the upper reaches of the millimeter-wave region. For example, DARPA’s High Frequency Integrated Vacuum Electronics (HiFIVE) program is focused on an integrated, microfabricated tube power amplifier circuit that can deliver more than 50 W of RF power at greater than five percent efficiency over a bandwidth greater than 5 GHz to 220 GHz. The subsystem will incorporate a first-stage MMIC driver circuit integrated into the overall amplifier, along with the cathode, electron-beam and the interaction and collection structures. Since its structures are incredibly tiny, this device will be produced using microfabrication technologies such as reactive ion etching, along with advances in material, device, and circuit technologies. The program’s grand finale will be an MPM that can operate without degradation for more than 100 hours in a high-bandwidth tactical communications link, with throughput comparable to optical fiber. This is obviously an appealing piece of hardware for tomorrow’s extremely small UAVs.

The U.S. is not alone in pursuing advanced tube development, as is evident in the technical program of the recent International Vacuum Electronics Conference in Rome sponsored by the European Space Agency. R&D programs described there include development of tubes for use in the terahertz region, as well as novel topologies and many other advances. Their authors hailed from Russia, China, Korea, Germany, Israel, Switzerland, France, Italy, Ukraine, Norway, India, Brazil, the Netherlands, Belgium, Canada, Taiwan, and even Belarus. The U.S. was well represented as well.

So while TWTs and other tubes may not be familiar to every microwave or RF engineer, they are not only viable, but ubiquitous, throughout terrestrial, airborne, and space-based defense systems worldwide, and in commercial and scientific applications as well. Solid-state devices may be chipping away at the lower echelons of the tube domain, but they’re chasing a target that is moving upwards in both frequency and RF output power – a situation that is likely to remain for decades to come.

dB Control
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